Integrated modulator platforms based on materials such as silicon, indium phosphide or polymers have not yet been able to meet these requirements simultaneously because of the intrinsic limitations of the materials used. In the current EOMs shown above, light is coupled into and out of the EOMs via a same side of the cavity, which is not convenient in practice since a circulator is required to separate the modulated light for the laser input. The metal electrode layer (10nm Ti/500 nm Au) was deposited by an electron-beam evaporator and the electrode structure was formed by a lift-off process via ZEP-520A. Thin film lithium niobate electro-optic modulator with terahertz operating bandwidth. Marko Lonar. Karpiski, M., Jachura, M., Wright, L. J. Integrated lithium niobate electro-optic modulators operating at CMOS-compatible voltages. Our EO modulators use MgO-doped lithium niobate for high power operation. Here, we make an important step towards miniaturizing functional components on this platform, reporting high-speed LN electro-optic modulators, based upon photonic crystal nanobeam resonators. & Lin, Q. High-Q 2D lithium niobate photonic crystal slab nanoresonators. J. Lightwave Technol. Nature 528, 534538 (2015). 25, 458460 (1974). Low-loss plasmon-assisted electro-optic modulator. 27), which is about 22fJ per bit in our EOM. wrote the manuscript with contribution from all authors. Opt. Figure2 shows a fabricated device (see Methods for the details of device fabrication). The fully on-chip design achieves a full-swing extinction ratio of 11.5dB. CAS Therefore, the electrodes can be shrunk to 103m2, which would reduce the capacitance considerably to ~0.27fF (~1.0fF if including the integrated wires36), according to our FEM simulations. Miller, D. A. Li, M. et al. Due to the high permittivity of LN at radio frequency, the commonly used full surrounding air cladding43,45,46 is not suitable for EOM since it would significantly reduce the coupling between the optical and electric fields. On the other hand, the 30-m length of the electrode is overly conservative since it covers the full length of photonic-crystal structure including the injector, mirrors, and the cavity (Figs. They are also expected to be building blocks for emerging applications such as quantum photonics5,6 and non-reciprocal optics7,8. These authors contributed equally: Cheng Wang, Mian Zhang, John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA, USA, Cheng Wang,Mian Zhang,Maxime Bertrand,Amirhassan Shams-Ansari&Marko Lonar, Department of Electronic Engineering, City University of Hong Kong, Kowloon, Hong Kong, China, Xi Chen,Sethumadhavan Chandrasekhar&Peter Winzer, LP2N, Institut dOptique Graduate School, CNRS, University of Bordeaux, Talence, France, Department of Electrical Engineering and Computer Science, Howard University, Washington, DC, USA, You can also search for this author in High modulation efficiency lithium niobate Michelson interferometer modulator. http://www.fujitsu.com/jp/group/foc/en/products/optical-devices/100gln/, Eospace 2017 Advanced Products. 6b). Anyone you share the following link with will be able to read this content: Sorry, a shareable link is not currently available for this article. Xinlun Cai, of Sun Yat -sen University, led a team that designed and fabricated a thin-film lithium niobate (TFLN) dual polarization in-phase and quadrature (DP-IQ) modulator, which sets new world . With a balance between the optical Q and the electro-optic tuning efficiency, we adopt a design with a 2.1-m gap and a 150-nm-thick wing layer to achieve the performance demonstrated in this paper, which is highlighted in red in Fig. Recently, heterogeneously integrated silicon and lithium niobate (Si/LN) optical modulators have demonstrated attractive overall performance in terms of optical loss, drive voltage, and modulation bandwidth. Input Requirements LiNbO 3 & Wang, A. X. Lu, H. et al. To show the electro-optic tuning property, we applied a DC voltage to the chip and monitored the cavity transmission spectrum of the \({\mathrm{{TE}}}_{01}^{0}\) mode. 8b, c. However, Fig. g Simulated optical mode field profile of the second-order TE-like cavity mode \({\mathrm{{TE}}}_{01}^{1}\). the best experience, we recommend you use a more up to date browser (or turn off compatibility mode in Increasing the electrical driving power now does not perturb the positions of the resonance dips, but rather changes their relative magnitudes since the magnitudes of the created sidebands depends on the driving amplitude48. IEEE Photonics Technol. To obtain ADS e Lattice constant a as a function of position, which is optimized for low insertion loss together with high radiation-limited optical Q. f Top view of the FEM-simulated optical mode field profile of the fundamental TE-like cavity mode \({\mathrm{{TE}}}_{01}^{0}\). Publishers note Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations. 27 March 2023, Receive 51 print issues and online access, Get just this article for as long as you need it, Prices may be subject to local taxes which are calculated during checkout. Lithium niobate photonic-crystal electro-optic modulator. Lett. Nat. Wlbern, J. H. et al. Our traveling-wave design and advanced index-matching technologies enable optical response over the entire millimeter-wave spectrum (up to 300 GHz). 8c) due to the decrease of optical mode confinement. (Credit: Second Bay Studios/Harvard SEAS). b Zoom-in image of the photonic-crystal resonator and electrodes, corresponding to the dashed rectangular region in a. c Further zoom-in image showing the detailed structure of the photonic-crystal defects cavity, corresponding to the dashed rectangular region in b. The flexible electro-optic modulation shown here may offer a convenient method for controlling the spectrotemporal properties of photons inside the cavity and for creating exotic quantum states48 that are crucial for quantum photonic applications. Nature 435, 325327 (2005). In 2015 IEEE Compound Semiconductor Integrated Circuit Symposium 14 (2015); https://doi.org/10.1109/CSICS.2015.7314513, Letal, G. et al. b, c Eye diagrams of the photonic-crystal EOM output, measured with 271 NRZ PRBS with a driving voltage of Vpp=2V. The laser wavelength was locked at half wave into the cavity resonance. Wood, M. G. et al. 4, e255 (2015). Integrated lithium niobate electro-optic modulators operating at CMOS-compatible voltages, Sub-1 Volt and high-bandwidth visible to near-infrared electro-optic modulators, Spectral control of nonclassical light pulses using an integrated thin-film lithium niobate modulator, Single-photon detection and cryogenic reconfigurability in lithium niobate nanophotonic circuits, Femtojoule femtosecond all-optical switching in lithium niobate nanophotonics, Extending the spectrum of fully integrated photonics to submicrometre wavelengths, Ultra-low-power second-order nonlinear optics on a chip, Microstructure and domain engineering of lithium niobate crystal films for integrated photonic applications, Femtofarad optoelectronic integration demonstrating energy-saving signal conversion and nonlinear functions, http://creativecommons.org/licenses/by/4.0/, Controlling single rare earth ion emission in an electro-optical nanocavity, Photonic van der Waals integration from 2D materials to 3D nanomembranes, Hydrothermal growth of KTiOPO4 crystal for electro-optical application, High-performance polarization management devices based on thin-film lithium niobate. Express 17, 2250522513 (2009). C.W., M.Z., X.C. The inset shows the S11 reflection scattering parameter for both devices. CAS High-speed plasmonic modulator in a single metal layer. Opt. ADS Poberaj, G., Hu, H., Sohler, W. & Gnter, P. Lithium niobate on insulator (LNOI) for micro-photonic devices. 6, 488503 (2012). Get the most important science stories of the day, free in your inbox. Liu, J. et al. Proc. In this research, we used all the nano-fabrication tricks and techniques learned from previous developments in integrated lithium niobate photonics to overcome those challenges and achieve the goal of integrating a high-powered laser on a thin-film lithium niobate platform.. Open Access articles citing this article. High-Q lithium niobate microdisk resonators on a chip for efficient electro-optic modulation. Commun. Yuan, L., Xiao, M., Lin, Q. Hybrid silicon photonic-lithium niobate electro-optic MachZehnder modulator beyond 100 GHz. CAS RT @OpticaPubsGroup: View Spotlight analysis of the #OPG_JOSA_B paper Spiral waveguide Bragg grating modulator on thin-film Z-cut lithium niobate http://ow.ly . Google Scholar. Jiang, W. et al. Electro-optic modulators translate high-speed electronic signals into the optical domain and are critical components in modern telecommunication networks1,2 and microwave-photonic systems3,4. Photon. Weigel, P. O. et al. Coherent modulation up to 100 GBd 16QAM using silicon-organic hybrid (SOH) devices. BER versus OSNR for the three modulation schemes at 70Gbaud. The inset shows an optical microscopic image of an EOM with the RF probe in contact. They also thank Wuxiucheng Wang, Lejie Lu, and Ming Gong for valuable discussions and help on testing. Wooten, E. L. et al. Opt. A review of lithium niobate modulators for fiber-optic communications systems. Opt. M.L., J.L., and S.X. 16, 18 (2018). The current generation of lithium niobate modulators are bulky, expensive, limited in bandwidth and require high drive voltages, and thus are unable to reach the full potential of the material. This work demonstrates the first (to the best of our knowledge) thin film lithium niobate electro-optic modulator operating at a wavelength of 1064 nm. To improve the electro-optic coupling, we utilize a partially etched structure with a rib-waveguide-like cross-section (Figs. Appl. Lithium Niobate Electro-Optic Modulators. Micro-transfer printing of thin-film lithium niobate offers a solution, but suspending large areas of thin films for long interaction lengths and high-Q resonators is challenging, resulting in a low transfer . External modulator is typically either a LiNbO3 modulator or an electroabsorptive modulator. To show this feature, we selected another similar device on the same chip, which has a lower loaded optical Q of 14,000. & Fan, S. Complete optical isolation created by indirect interband photonic transitions. If material is not included in the articles Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. The blue open circles show the dielectric and air bands. It has a bias control section that integrates with a tap monitor for stable operation. 100GHz siliconorganic hybrid modulator. High-performance and linear thin-film lithium niobate Mach-Zehnder modulators on silicon up to 50 GHz. However, negligible degradation observed between Fig. Hybrid Silicon and Lithium Niobate Modulator Abstract: Hybrid Lithium Niobate (LN) and Silicon photonic (SiPh) integration platform has emerged as a promising candidate to combine the scalability of silicon photonics with the excellent modulation performance of LN. Google Scholar. Rev. The impedance of the metallic structure is optimized to minimize the coupling loss of the RF signal from the pads to the device. Optica 4, 12511258 (2017). Optica 4, 15361537 (2017). Wang, C. et al. Topics For LN, however, the EOMs developed so far1,13,14,15,16,17,18,19,20,21,22,23,24,25,26 generally exhibit significant dimensions, leading to significant power required to drive the EOMs. Lithium Niobate Nonlinear Thermal Waveguide MODE Automation API Nonlinear Optics Photonic Integrated Circuits - Active Computing Second-harmonic generation (SHG) in a Lithium Niobite - LiNbO3 (LNO) nanophotonic waveguide is studied using temperature modulation to achieve efficient phase matching. Google Scholar. Rao, A. et al. 50-Gb/s silicon optical modulator. J. Lightwave Technol. 8b), which, however, might sacrifice the optical Q due to metallic losses. High-quality lithium niobate photonic crystal nanocavities. 1a), where an injector section (Fig. The blue column shows another design with broader bandwidth and enhanced electro-optic coupling. Opt. B. Streshinsky, M. et al. Chen, L., Xu, Q., Wood, M. G. & Reano, R. M. Hybrid silicon and lithium niobate electro-optical ring modulator. IEEE Sel Top. Opt. Integrating high-performance plug-and-play lasers would significantly reduce the cost, complexity, and power consumption of future communication systems, said Amirhassan Shams-Ansari, a graduate student at SEAS and first author of the study. The insertion loss from the on-chip coupling waveguide to the photonic-crystal cavity is measured to be around 2.2dB, calibrated by subtracting the facet coupling and circulator transmission loss. Lu, H. et al. Opt. Extended Data Fig. Device fabrication is performed at the Harvard University Center for Nanoscale Systems, a member of the National Nanotechnology Coordinated Infrastructure Network, which is supported by the NSF under ECCS award no. 8c). Wooten, E. L. et al. Photonics 4, 518526 (2010). Google Scholar. Slider with three articles shown per slide. PubMed We first assess the performance of our high symbol rate transmitter . Now, researchers from the Harvard John A. Paulson School of Engineering and Applied Sciences (SEAS) in collaboration with industry partners at Freedom Photonics and HyperLight Corporation, have developed the first fully integrated high-power laser on a lithium niobate chip, paving the way for high-powered telecommunication systems. Recently, there have been significant advance in high-Q LN photonic-crystal nanoresonators43,44,45,46, which led to the demonstration of intriguing phenomena and functionalities such as photorefraction quenching43, harmonic generation44, piezo-optomechanics45, and all-optical resonance tuning46. Appl. b, High-speed data modulation set-up. @article{Ghosh2023WaferscaleHI, title={Wafer-scale heterogeneous integration of thin film lithium niobate on silicon-nitride photonic integrated circuits with low loss bonding interfaces}, author={Siddhartha Ghosh and Siva Yegnanarayanan and Dave Kharas and Matthew Ricci and Jason Plant and Paul W. Juodawlkis}, journal={Optics Express}, year . The data sets generated and/or analysed during the current study are available from the corresponding authors on reasonable request. Boyd, R. W. Nonlinear Optics (Academic, Cambridge, 2003). This work was performed in part at the Cornell NanoScale Facility, a member of the National Nanotechnology Coordinated Infrastructure (National Science Foundation, ECCS-1542081). Wang, C., Zhang, M., Stern, B., Lipson, M. & Loncr, M. Nanophotonic lithium niobate electro-optic modulators. When the EOM is driven at a modulation frequency of 600MHz much smaller than the cavity linewidth of 1.4GHz, increasing the driving power simply broadens the transmission spectrum into one with two shallow side lobes, as shown in Fig. Google Scholar. Opt. Winzer, P. J. Express 24, 1559015595 (2016). Optica 6, 14981505 (2019). Opt. Appl. The modulators enable efficient electro-optic driving of high-Q photonic cavity modes in both adiabatic and non-adiabatic regimes, and allow us to achieve electro-optic switching at 11 Gb s1 with a bit-switching energy as low as 22 fJ. Open Access are involved in developing lithium niobate technologies at HyperLight Corporation. As a result, a full air cladding would strongly limits the electro-optic coupling, leading to a low efficiency of electro-optic tuning as indicated by the individual black column in Fig. The electro-optic modulation demonstrated in the previous section indicates the potential high-speed operation of the EOMs. Laser Photon. 14 April 2023, Light: Science & Applications Photonics 13, 359364 (2019). We realize an intensity modulator of 12.5 mm long modulation section, which exhibits a low half-wave voltage of 1.7 V and a large 3 dB modulation bandwidth of >70 GHz. The images or other third party material in this article are included in the articles Creative Commons license, unless indicated otherwise in a credit line to the material. ADS The velocity-matched modulator has a typical insertion loss of 4 dB, drive voltage of 5 V, and electrical return loss of . Rao, A. et al. Harnessing plasma absorption in silicon MOS ring modulators, Resonant plasmonic micro-racetrack modulators with high bandwidth and high temperature tolerance, Photonic van der Waals integration from 2D materials to 3D nanomembranes, A power-efficient integrated lithium niobate electro-optic comb generator.
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